mixers - i/q mixers / irm - chip 3 3 - 58 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com hmc404 gaas mmic sub-harmonically pumped irm mixer, 26 - 33 ghz v03.0907 general description features functional diagram the hmc404 chip is a sub-harmonically pumped (x2) mmic image rejection mixer with an integrated lo amplifi er which can be used as an upconverter or downconverter. the chip utilizes a gaas phemt technology that results in a small overall chip area of 2.31mm 2 . the on-chip 90 hybrid provides excellent amplitude and phase balance resulting in greater than 22 db of image rejection. the lo amplifi er is a single bias (+4v) two stage design with only +2 dbm nominal drive required. integrated lo amplifi er: +2 dbm input sub-harmonically pumped (x2) lo image rejection: 22 db small size: 1.90 x 1.25mm electrical specifi cations, t a = +25 c typical applications the hmc404 is ideal for: ? 26 to 33 ghz microwave radios ? up and down converter for point-to-point radios ? satellite communication systems * unless otherwise noted, all measurements performed as downconverter. parameter if = 1 ghz lo = +2 dbm & vdd = +4v units min. typ. max. frequency range, rf 26 - 33 ghz frequency range, lo 13 - 16.5 ghz frequency range, if dc - 3 ghz conversion loss (as irm) 11 15 d b image rejection 15 22 db noise figure 11 15 d b 1 db compression (input) +2 +6 dbm 2lo to rf isolation 20 35 db 2lo to if isolation 20 35 db ip3 (input) 8 16 dbm amplitude balance 1.5 db phase balance 7 deg supply current (idd) 28 38 ma
mixers - i/q mixers / irm - chip 3 3 - 59 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain vs. temperature @ lo= +2 dbm, vdd= +4v upconverter performance conversion gain vs. lo drive @ vdd= +4v conversion gain vs. lo drive @ vdd= +4v image rejection vs. temperature @ lo= +2 dbm, vdd= +4v input p1db vs. temperature @ lo= +2 dbm, vdd= +4v input ip3 vs. lo drive @ vdd= +4v* * two-tone input power= -10 dbm each tone, 1 mhz spacing. data taken as irm with 1 ghz if hybrid -30 -25 -20 -15 -10 -5 0 24 26 28 30 32 34 36 +25c -55c +85c conversion gain (db) rf frequency (ghz) 0 5 10 15 20 25 30 24 26 28 30 32 34 36 +25c -55c +85c image rejection (db) rf frequency (ghz) 0 2 4 6 8 10 26 27 28 29 30 31 32 33 +25c -55c +85c p1db (dbm) rf frequency (ghz) 0 5 10 15 20 26 27 28 29 30 31 32 33 0 dbm +2 dbm +4 dbm +6 dbm ip3 (dbm) rf frequency (ghz) -30 -25 -20 -15 -10 -5 0 24 26 28 30 32 34 36 -2dbm 0dbm +2dbm +4dbm +6dbm conversion gain (db) rf frequency (ghz) -30 -25 -20 -15 -10 -5 0 24 26 28 30 32 34 36 0 dbm +2 dbm +4 dbm conversion gain (db) rf frequency (ghz) hmc404 v03.0907 gaas mmic sub-harmonically pumped irm mixer, 26 - 33 ghz
mixers - i/q mixers / irm - chip 3 3 - 60 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com conversion gain vs. vdd @ lo= +2 dbm, if= 100 mhz isolation @ lo= +2 dbm, if= 100 mhz, vdd= +4v amplitude balance vs. temperature @ lo= +2 dbm, if= 100 mhz, vdd= +4v phase balance vs. temperature @ lo= +2 dbm, if= 100 mhz, vdd= +4v return loss @ lo= +2 dbm, vdd= +4v if bandwidth @ lo= +2 dbm, vdd= +4v quadrature channel data taken without if hybrid -25 -20 -15 -10 -5 24 26 28 30 32 34 36 3.75v 4.0v 4.25v conversion gain (db) rf frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 conversion gain return loss response (db) if frequency (ghz) -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 25 30 35 40 rf lo return loss (db) frequency (ghz) -20 -15 -10 -5 0 5 10 24 26 28 30 32 34 36 +25c -55c +85c phase balance (degrees) rf frequency (ghz) -3 -2 -1 0 1 2 3 24 26 28 30 32 34 36 +25c -55c +85c amplitude balance (db) rf frequency (ghz) -80 -70 -60 -50 -40 -30 -20 -10 25 26 27 28 29 30 31 32 33 34 35 rf/if lo/rf lo/if 2lo/rf 2lo/if isolation (db) rf frequency (ghz) hmc404 v03.0907 gaas mmic sub-harmonically pumped irm mixer, 26 - 33 ghz
mixers - i/q mixers / irm - chip 3 3 - 61 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mxn spurious @ if port, vdd = +4v mxn spurious @ rf port, vdd = +4v nlo mrf 5 4 3 2 1 0 -3 -2 65 -1 28 71 022-3 1x5518 27656 3 rf = 30.5 ghz @ -10 dbm lo = 15 ghz @ +2 dbm all values in dbc below if power level. measured as downconverter nlo mif 5 4 3 2 1 0 -3 66 -2 64 64 -1 x 53 0176 1225736 27665 355 if = 0.5 ghz @ -10 dbm lo = 15 ghz @ +2 dbm all values in dbc below rf power level. measured as upconverter. hmc404 v03.0907 gaas mmic sub-harmonically pumped irm mixer, 26 - 33 ghz
mixers - i/q mixers / irm - chip 3 3 - 62 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings rf / if input (vdd = +5v) +13 dbm lo drive (vdd = +5v) +13 dbm vdd 5.5v continuous pdiss (ta = 85 c) (derate 2.64 mw/c above 85 c) 238 mw storage temperature -65 to +150 c operating temperature -55 to +85 c notes: 1. all dimensions in inches (millimeters) 2. all tolerances are 0.001 (0.025) 3. die thickness is 0.004 (0.100) backside is ground 4. bond pads are 0.004 (0.100) square 5. bond pad spacing, ctr-ctr: 0.006 (0.150) 6. backside metallization: gold 7. bond pad metallization: gold 8. no connection required to unlabed bond pads die packaging information [1] standard alternate gp-2 [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. electrostatic sensitive device observe handling precautions hmc404 v03.0907 gaas mmic sub-harmonically pumped irm mixer, 26 - 33 ghz
mixers - i/q mixers / irm - chip 3 3 - 63 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad number function description interface schematic 1lo this pad is ac coupled and matched to 50 ohm. 2vdd power supply for the lo amplifi er. an external rf bypass capacitor of 100 - 330 pf is required. a mim border capacitor is recommended. the bond length to the capacitor should be as short as possible. the ground side of the capacitor should be connected to the housing ground. 3rf this pad is ac coupled and matched to 50 ohm. 4if2 this pin is dc coupled. for applications not requiring opera- tion to dc, this port should be dc blocked externally using a series capacitor whose value has been chosen to pass the necessary if frequency range. for operation to dc, this pin must not source/sink more than 3ma of current or die non- function and possible die failure will result. 5if1 this pin is dc coupled. for applications not requiring opera- tion to dc, this port should be dc blocked externally using a series capacitor whose value has been chosen to pass the necessary if frequency range. for operation to dc, this pin must not source/sink more than 3ma of current or die non- function and possible die failure will result. pad descriptions hmc404 v03.0907 gaas mmic sub-harmonically pumped irm mixer, 26 - 33 ghz
mixers - i/q mixers / irm - chip 3 3 - 64 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com assembly diagrams hmc404 v03.0907 gaas mmic sub-harmonically pumped irm mixer, 26 - 33 ghz
mixers - i/q mixers / irm - chip 3 3 - 65 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin fi lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin fi lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should be brought as close to the die as possible in order to minimize ribbon bond length. typical die-to-substrate spacing is 0.076mm (3 mils). gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is recommended to minimize inductance on rf, lo & if ports. an rf bypass capacitor should be used on the vdd input. a 100 pf single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 mils) from the chip is recommended. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mount ing surface should be clean and fl at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding rf bonds made with 0.003 x 0.0005 ribbon are recommended. these bonds should be thermosonically bonded with a force of 40-60 grams. dc bonds of 0.001 (0.025 mm) diameter, thermosonically bonded, are recommended. ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. all bonds should be made with a nominal stage temperature of 150 c. a minimum amount of ultrasonic energy should be applied to achieve reliable bonds. all bonds should be as short as possib le, less than 12 mils (0.31 mm). 0.102mm (0.004?) thick gaas mmic 3 mil ribbon bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic 3 mil ribbon bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc404 v03.0907 gaas mmic sub-harmonically pumped irm mixer, 26 - 33 ghz
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